MOSFET P-CH 20V 3.2A CHIPFET NTHD3101FT3
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Description:
MOSFET P-CH 20V 3.2A CHIPFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTHD3101FT3(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28315,Price reference "real-time change" China/Hongkong。 NTHD3101FT3 package/specs, Download NTHD3101FT3、Datasheet。