MOSFET N-CH 100V 10A TO252AA HUFA76609D3ST
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Description:
MOSFET N-CH 100V 10A TO252AA
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
HUFA76609D3ST(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2123,Price reference "real-time change" China/Hongkong。 HUFA76609D3ST package/specs, Download HUFA76609D3ST、Datasheet。