MOSFET N-CH 50V 5.8A 8SOIC FDS5692Z
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Description:
MOSFET N-CH 50V 5.8A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS5692Z(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory71775,Price reference "real-time change" China/Hongkong。 FDS5692Z package/specs, Download FDS5692Z、Datasheet。