MOSFET N-CH 500V 9A D2PAK FQB9N50CFTM_WS
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Description:
MOSFET N-CH 500V 9A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB9N50CFTM_WS(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory37051,Price reference "real-time change" China/Hongkong。 FQB9N50CFTM_WS package/specs, Download FQB9N50CFTM_WS、Datasheet。