MOSFET N-CH 30V 9.6A/58A IPAK NTD4809N-35G
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Description:
MOSFET N-CH 30V 9.6A/58A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD4809N-35G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30764,Price reference "real-time change" China/Hongkong。 NTD4809N-35G package/specs, Download NTD4809N-35G、Datasheet。