NTLJF3118NTAG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NTLJF3118NTAG

Description:

MOSFET N-CH 20V 2.6A 6WDFN

Stock:

32372

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

2.6A(Ta)

Drain source voltage (Vdss)

20 V

Drive voltage (maximum RdsOn, minimum RdsOn)

1.8V,4.5V

FET Type

N channels

FET function

Schottky diode (isolated)

Gate charge (Qg) at different Vgs (maximum)

3.7 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

271 pF @ 10 V

On resistance (maximum) for different Ids and Vgs

65 mΩ @ 3.8A,4.5V

Power dissipation (maximum)

700mW(Ta)

Vgs (max)

±12V

Vgs (th) (maximum) for different Ids

1V @ 250µA

packing

TR,bulk

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

6-WDFN(2x2)

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载NTLJF3118NTAG.pdf

NTLJF3118NTAG（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32372,Price reference "real-time change" China/Hongkong。 NTLJF3118NTAG package/specs, Download NTLJF3118NTAG、Datasheet。