MOSFET P-CH 20V 2.8A SUPERSOT6 FDC636P
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Description:
MOSFET P-CH 20V 2.8A SUPERSOT6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDC636P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory95437,Price reference "real-time change" China/Hongkong。 FDC636P package/specs, Download FDC636P、Datasheet。