MOSFET N-CH 16V 9.6A/51A DPAK NTD3813NT4G
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Description:
MOSFET N-CH 16V 9.6A/51A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD3813NT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24588,Price reference "real-time change" China/Hongkong。 NTD3813NT4G package/specs, Download NTD3813NT4G、Datasheet。