MOSFET N-CH 200V 3.6A D2PAK FQB4N20TM
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Description:
MOSFET N-CH 200V 3.6A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQB4N20TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory65256,Price reference "real-time change" China/Hongkong。 FQB4N20TM package/specs, Download FQB4N20TM、Datasheet。