MOSFET P-CH 20V 4.5A SUPERSOT6 FDC640P_F095
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Description:
MOSFET P-CH 20V 4.5A SUPERSOT6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDC640P_F095(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory85411,Price reference "real-time change" China/Hongkong。 FDC640P_F095 package/specs, Download FDC640P_F095、Datasheet。