MOSFET N-CH 500V 3A DPAK FDD5N50UTF_WS
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Description:
MOSFET N-CH 500V 3A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDD5N50UTF_WS(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory52313,Price reference "real-time change" China/Hongkong。 FDD5N50UTF_WS package/specs, Download FDD5N50UTF_WS、Datasheet。