MOSFET N-CH 200V 9A TO220-3 IRF630B_FP001
The pictures are for reference only
Description:
MOSFET N-CH 200V 9A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF630B_FP001(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32793,Price reference "real-time change" China/Hongkong。 IRF630B_FP001 package/specs, Download IRF630B_FP001、Datasheet。