MOSFET P-CH 20V 2.2A 6WDFN NTLJD3182FZTBG
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Description:
MOSFET P-CH 20V 2.2A 6WDFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTLJD3182FZTBG(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79210,Price reference "real-time change" China/Hongkong。 NTLJD3182FZTBG package/specs, Download NTLJD3182FZTBG、Datasheet。