MOSFET N-CH 30V 4.9A 8SOIC NTMS4800NR2G
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Description:
MOSFET N-CH 30V 4.9A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMS4800NR2G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory41484,Price reference "real-time change" China/Hongkong。 NTMS4800NR2G package/specs, Download NTMS4800NR2G、Datasheet。