MOSFET N-CH 100V 6.4A/30A TO263 FDB3860
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Description:
MOSFET N-CH 100V 6.4A/30A TO263
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDB3860(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory35298,Price reference "real-time change" China/Hongkong。 FDB3860 package/specs, Download FDB3860、Datasheet。