MOSFET N-CH 500V 4A DPAK FQD5N50CTM_F080
The pictures are for reference only
Description:
MOSFET N-CH 500V 4A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD5N50CTM_F080(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory75250,Price reference "real-time change" China/Hongkong。 FQD5N50CTM_F080 package/specs, Download FQD5N50CTM_F080、Datasheet。