MOSFET P-CH 200V 3.1A IPAK SFU9220TU_F080
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Description:
MOSFET P-CH 200V 3.1A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SFU9220TU_F080(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90491,Price reference "real-time change" China/Hongkong。 SFU9220TU_F080 package/specs, Download SFU9220TU_F080、Datasheet。