MOSFET N-CH 25V 3.8A/17.1A DPAK NTD23N03RT4G
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Description:
MOSFET N-CH 25V 3.8A/17.1A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD23N03RT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory17334,Price reference "real-time change" China/Hongkong。 NTD23N03RT4G package/specs, Download NTD23N03RT4G、Datasheet。