MOSFET N-CH 30V 10A 8SOIC NTMS4935NR2G
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Description:
MOSFET N-CH 30V 10A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMS4935NR2G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory44948,Price reference "real-time change" China/Hongkong。 NTMS4935NR2G package/specs, Download NTMS4935NR2G、Datasheet。