MOSFET N-CH 600V 2.2A IPAK NDD02N60Z-1G
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Description:
MOSFET N-CH 600V 2.2A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NDD02N60Z-1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory63276,Price reference "real-time change" China/Hongkong。 NDD02N60Z-1G package/specs, Download NDD02N60Z-1G、Datasheet。