MOSFET N-CH 30V 9A/58A IPAK NTD4959NH-1G
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Description:
MOSFET N-CH 30V 9A/58A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD4959NH-1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79232,Price reference "real-time change" China/Hongkong。 NTD4959NH-1G package/specs, Download NTD4959NH-1G、Datasheet。