MOSFET N-CH 30V 9A/58A DPAK NTD4959NHT4G
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Description:
MOSFET N-CH 30V 9A/58A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD4959NHT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory37576,Price reference "real-time change" China/Hongkong。 NTD4959NHT4G package/specs, Download NTD4959NHT4G、Datasheet。