MOSFET P-CH 20V 10A 8SOIC NVMS10P02R2G
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Description:
MOSFET P-CH 20V 10A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVMS10P02R2G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory73886,Price reference "real-time change" China/Hongkong。 NVMS10P02R2G package/specs, Download NVMS10P02R2G、Datasheet。