MOSFET N-CH 30V 8.9A/55A IPAK NTD4960N-1G
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Description:
MOSFET N-CH 30V 8.9A/55A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD4960N-1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory77355,Price reference "real-time change" China/Hongkong。 NTD4960N-1G package/specs, Download NTD4960N-1G、Datasheet。