MOSFET N-CH 500V 3A DPAK NDD04N50ZT4G
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Description:
MOSFET N-CH 500V 3A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NDD04N50ZT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39233,Price reference "real-time change" China/Hongkong。 NDD04N50ZT4G package/specs, Download NDD04N50ZT4G、Datasheet。