MOSFET N-CH 30V 8.9A/55A DPAK NTD4960NT4G
The pictures are for reference only
Description:
MOSFET N-CH 30V 8.9A/55A DPAK
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD4960NT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30342,Price reference "real-time change" China/Hongkong。 NTD4960NT4G package/specs, Download NTD4960NT4G、Datasheet。