MOSFET N-CH 500V 28.4A TO3P FQA28N50_F109
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Description:
MOSFET N-CH 500V 28.4A TO3P
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQA28N50_F109(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory75720,Price reference "real-time change" China/Hongkong。 FQA28N50_F109 package/specs, Download FQA28N50_F109、Datasheet。