MOSFET N-CH 30V 150MA 3CP 3LN01C-TB-H
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Description:
MOSFET N-CH 30V 150MA 3CP
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
3LN01C-TB-H(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory717,Price reference "real-time change" China/Hongkong。 3LN01C-TB-H package/specs, Download 3LN01C-TB-H、Datasheet。