MOSFET N-CH 40V 24A/123A DPAK NVD5890NT4G
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Description:
MOSFET N-CH 40V 24A/123A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVD5890NT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory97998,Price reference "real-time change" China/Hongkong。 NVD5890NT4G package/specs, Download NVD5890NT4G、Datasheet。