MOSFET P-CH 60V 18.5A D2PAK NTB5605PT4G
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Description:
MOSFET P-CH 60V 18.5A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTB5605PT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory86146,Price reference "real-time change" China/Hongkong。 NTB5605PT4G package/specs, Download NTB5605PT4G、Datasheet。