MOSFET N-CH 30V 4.8A 8SOIC NTMS7N03R2G
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Description:
MOSFET N-CH 30V 4.8A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTMS7N03R2G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28040,Price reference "real-time change" China/Hongkong。 NTMS7N03R2G package/specs, Download NTMS7N03R2G、Datasheet。