MOSFET P-CH 20V 1.2A SC88 FDG312P
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Description:
MOSFET P-CH 20V 1.2A SC88
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDG312P(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory84897,Price reference "real-time change" China/Hongkong。 FDG312P package/specs, Download FDG312P、Datasheet。