MOSFET N-CH 800V 12A TO3PB 2SK4209
The pictures are for reference only
Description:
MOSFET N-CH 800V 12A TO3PB
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
2SK4209(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1230,Price reference "real-time change" China/Hongkong。 2SK4209 package/specs, Download 2SK4209、Datasheet。