MOSFET N-CH 60V 60A D2PAK NVB60N06T4G
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Description:
MOSFET N-CH 60V 60A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVB60N06T4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory69004,Price reference "real-time change" China/Hongkong。 NVB60N06T4G package/specs, Download NVB60N06T4G、Datasheet。