MOSFET N-CH 30V 9.4A/41A DPAK NTD4979NT4G
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Description:
MOSFET N-CH 30V 9.4A/41A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD4979NT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory74100,Price reference "real-time change" China/Hongkong。 NTD4979NT4G package/specs, Download NTD4979NT4G、Datasheet。