MOSFET N-CH 30V 11.3A/79A DPAK NTD4806NT4G
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Description:
MOSFET N-CH 30V 11.3A/79A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NTD4806NT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory69142,Price reference "real-time change" China/Hongkong。 NTD4806NT4G package/specs, Download NTD4806NT4G、Datasheet。