MOSFET N-CH 20V 1.9A SC88 FDG311N
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Description:
MOSFET N-CH 20V 1.9A SC88
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDG311N(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13059,Price reference "real-time change" China/Hongkong。 FDG311N package/specs, Download FDG311N、Datasheet。