MOSFET P-CH 20V 4A SUPERSOT6 FDC642P-F085
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Description:
MOSFET P-CH 20V 4A SUPERSOT6
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, PowerTrench®
DataSheet
FDC642P-F085(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23423,Price reference "real-time change" China/Hongkong。 FDC642P-F085 package/specs, Download FDC642P-F085、Datasheet。