MOSFET N-CH 60V 7A 8SOIC FDS5690-NBBM009A
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Description:
MOSFET N-CH 60V 7A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDS5690-NBBM009A(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory34495,Price reference "real-time change" China/Hongkong。 FDS5690-NBBM009A package/specs, Download FDS5690-NBBM009A、Datasheet。