MOSFET N-CH 100V 58A D2PAK-3 NVB6412ANT4G
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Description:
MOSFET N-CH 100V 58A D2PAK-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVB6412ANT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory7466,Price reference "real-time change" China/Hongkong。 NVB6412ANT4G package/specs, Download NVB6412ANT4G、Datasheet。