MOSFET N-CH 500V 26A TO3P-3L WPB4001-1E
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Description:
MOSFET N-CH 500V 26A TO3P-3L
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
WPB4001-1E(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory85813,Price reference "real-time change" China/Hongkong。 WPB4001-1E package/specs, Download WPB4001-1E、Datasheet。