MOSFET N-CH 650V 20.6A TO220F FCPF190N65FL1
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Description:
MOSFET N-CH 650V 20.6A TO220F
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FCPF190N65FL1(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64591,Price reference "real-time change" China/Hongkong。 FCPF190N65FL1 package/specs, Download FCPF190N65FL1、Datasheet。