NDDP010N25AZ-1H parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NDDP010N25AZ-1H

Description:

MOSFET N-CH 250V 10A IPAK/TP

Stock:

8557

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

10A(Ta)

Drain source voltage (Vdss)

250 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

16 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

980 pF @ 20 V

On resistance (maximum) for different Ids and Vgs

420 mΩ @ 5A,10V

Power dissipation (maximum)

1W(Ta),52W(Tc)

Vgs (max)

±30V

Vgs (th) (maximum) for different Ids

4.5V @ 1mA

packing

bulk,bag

series

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

IPAK/TP

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production

DataSheet

下载NDDP010N25AZ-1H.pdf

NDDP010N25AZ-1H（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8557,Price reference "real-time change" China/Hongkong。 NDDP010N25AZ-1H package/specs, Download NDDP010N25AZ-1H、Datasheet。