MOSFET N-CH 600V 8.2A IPAK NDD60N550U1-1G
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Description:
MOSFET N-CH 600V 8.2A IPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NDD60N550U1-1G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23391,Price reference "real-time change" China/Hongkong。 NDD60N550U1-1G package/specs, Download NDD60N550U1-1G、Datasheet。