MOSFET N-CH 600V 8.2A DPAK NDD60N550U1T4G
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Description:
MOSFET N-CH 600V 8.2A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NDD60N550U1T4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory60819,Price reference "real-time change" China/Hongkong。 NDD60N550U1T4G package/specs, Download NDD60N550U1T4G、Datasheet。