MOSFET N-CH 60V 10A/46A DPAK NVD5865NLT4G
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Description:
MOSFET N-CH 60V 10A/46A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
NVD5865NLT4G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39051,Price reference "real-time change" China/Hongkong。 NVD5865NLT4G package/specs, Download NVD5865NLT4G、Datasheet。