GANFET N-CH 600V 9A TO220-3 NTP8G202NG
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Description:
GANFET N-CH 600V 9A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
GaNFET(Cascode gallium nitrideFET)
DataSheet
NTP8G202NG(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23479,Price reference "real-time change" China/Hongkong。 NTP8G202NG package/specs, Download NTP8G202NG、Datasheet。