NVD3055L170T4G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NVD3055L170T4G

Description:

MOSFET N-CH 60V 9A DPAK

Stock:

13802

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

9A(Ta)

Drain source voltage (Vdss)

60 V

Drive voltage (maximum RdsOn, minimum RdsOn)

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

10 nC @ 5 V

Input capacitance at different Vds (Ciss) (maximum)

275 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

170 mΩ @ 4.5A,5V

Power dissipation (maximum)

1.5W(Ta),28.5W(Tj)

Vgs (max)

±15V

Vgs (th) (maximum) for different Ids

2V @ 250µA

packing

TR,CT

series

Automotive, AEC-Q101

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

DPAK

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载NVD3055L170T4G.pdf

NVD3055L170T4G（MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13802,Price reference "real-time change" China/Hongkong。 NVD3055L170T4G package/specs, Download NVD3055L170T4G、Datasheet。