MOSFET P-CH 60V 1.25A SUPERSOT3 FDN5618P_G
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Description:
MOSFET P-CH 60V 1.25A SUPERSOT3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDN5618P_G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93023,Price reference "real-time change" China/Hongkong。 FDN5618P_G package/specs, Download FDN5618P_G、Datasheet。