MOSFET P-CH 20V 1.6A SUPERSOT3 FDN338P_G
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Description:
MOSFET P-CH 20V 1.6A SUPERSOT3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FDN338P_G(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory75063,Price reference "real-time change" China/Hongkong。 FDN338P_G package/specs, Download FDN338P_G、Datasheet。